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FCP20N60

FCP20N60
Bilderna är endast till referens
Artikelnummer
FCP20N60
kategorier
MOSFET
RoHS
Datablad
Beskrivning
MOSFET 600V N-Channel SuperFET
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Specifikationer

kategorier
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
65 ns
Forward Transconductance - Min
17 S
Height
16.3 mm
Id - Continuous Drain Current
20 A
Length
10.67 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220-3
Packaging
Tube
Pd - Power Dissipation
208 W
Product Type
MOSFET
Rds On - Drain-Source Resistance
190 mOhms
Rise Time
140 ns
Series
FCP20N60
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Type
MOSFET
Typical Turn-Off Delay Time
230 ns
Typical Turn-On Delay Time
62 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Width
4.7 mm

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Senaste recensioner

Skriv din egen Reivew
all exactly and work. радиолюбителя useful set to, thank you)
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Works. Recommend
the photo in comparison with cheap. Delivery fast
The timer is running. 10 PCS. Packed properly.
Mer

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